Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2005-03-18
2008-07-01
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S185070, C365S185180, C365S185220, C365S185270
Reexamination Certificate
active
07394708
ABSTRACT:
A system that increases device yield by correcting improper operation of the device's memory cells due to process variations is disclosed. The device includes an array of memory cells and an adjustable bias voltage circuit, and is coupled to a test circuit that generates a feedback signal indicating whether one or more of the memory cells fail to operate properly. The adjustable bias voltage circuit selectively adjusts a bias voltage tied to the substrate provided to the memory cells in response to the feedback signal to alter the operating characteristics of the memory cells so that all of the memory cells will operate properly. For some embodiments, a plurality of fuses are provided for storing control signals that control the bias voltage provided to the memory cells.
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Nguyen Viet Q.
Paradice III William L.
XILINX Inc.
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