Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2003-10-07
2008-08-05
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C257SE21122
Reexamination Certificate
active
07407863
ABSTRACT:
Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.
REFERENCES:
patent: 5233216 (1993-08-01), Inoue et al.
patent: 5854090 (1998-12-01), Iwai et al.
patent: 5858855 (1999-01-01), Kobayashi
patent: 5920766 (1999-07-01), Floyd
patent: 6066547 (2000-05-01), Maekawa
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 6881644 (2005-04-01), Malik et al.
patent: 1 246 238 (2002-10-01), None
patent: 10-12506 (1998-01-01), None
L.J. Chou, K.C. Hsieh, D.E. Wohlert and K.Y. Cheng,Formation of Amorphous Aluminum Oxide and Gallium Oxide on InP Substrates by Water Vapor Oxidation, American Institute of Physics, pp. 6932-6934, Dec. 15, 1998.
L.J. Chou, K.C. Hsieh, A. Moy, D.E. Wohlert, G. Pickrell and K.Y. Cheng,Improving the A1-Bearing Native-Oxide/GaAs Interface Formed by Wet Oxidation with a Thin GaP Barier Layer, American Institute of Physics, pp. 2722-2724, May 25, 2003.
K. L. Chang, G.W. Pickrell, D.E. Wohlert, J.H. Epple, H.C. Lin, K.Y. Cheng and K.C. Hsieh,Microstructure and Wet Oxidation of Low-Temperature-Grown Amorphous(Al/Ga,As), American Institute of Physics, vol. 89 No. 1, pp. 747-752, Jan. 1, 2001.
J.J. Epple, K.L. Chang, C.F. Xu, G.W. Pickrell, K.Y. Chang, and K.C. Hsieh,Formation of Highly Conductive Polycrystalline GaAs from Annealed Amorphous(Ga,As), American Institute of Physics, pp. 5331-5336, May 1, 2003.
H.C. Lin, W.H. Wang, K.C. Hsieh and K.Y. Cheng,Fabrication of 1.55 μm VCSELs on Si Using Metallic Bonding, Electronics Letters, vol. 38 No. 11, May 23, 2002.
H.C. Lin, K.L. Chang, K.C. Hsieh, K.Y. Cheng,Metallic Wafer Bonding for the Fabrication of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers, Journal of Applied Physics, vol. 92 No. 7, pp. 4132-4134, Oct. 1, 2002.
H.C. Lin, K.L. Chang, G.W. Pickrell, K.C. Hsieh and K.Y. Cheng,Low Temperature Wafer Bonding by Spin on Glass, Journal of Vacuum Science & Technology B, vol. 20 No. 2, pp. 752-754, Mar./Apr. 2002.
G.W. Pickrell, K.L. Chang, J.H. Epple, K.Y. Chang and K.C. Hsieh,Protection of In0.25Ga0.75As/GaAs Structures During Lateral Oxidation Using an Amorphous InGaP Layer, American Vacuum Society, vol. 20 No. 3, pp. 876-879, May/Jun. 2002.
G.W. Pickrell, K.L. Chang, H.C. Lin, K.C. Hsieh and K.Y. Cheng,Very-Low-Temperature Molecular Beam Epitaxial of GaP/A/As Heterostructures for Distributed Bragg Reflector Applications, American Vacuum Society; pp. 1536-1540, Jul./Aug. 2001.
G.W. Pickrell, H.C. Lin, K.L. Chang, K.C. Hsieh and K.Y. Cheng;Fabrication of GaP/Al-Oxide Distributed Bragg Reflectors for the Visible Spectrum, Applied Physics Letters, vol. 78 No. 8, pp. 1044-1046, Feb. 19, 2001.
Frank Shi, Scott MacLaren, Chaofeng Xu, K.Y. Cheng and K.C. Hsieh,Hybrid-integrated GaAs/GaAs and InP/GaAs Semiconductors Through Wafer Bonding Technology: Interface Adhesion and Mechanical Strength: American Institute of Physics, pp. 5750-5756, May 1, 2003.
Frank F. Shi, Kuo-Lih Chang and Veronica I. Lai,UltraWafer, Inc., A UIUC Semiconductor Start-up, Speeding Up What's Next, pp. 2-24.
D.E. Wohlert, H.C. Lin, K.L. Chang, G.W. Pickrell, Jr., J.H. Epple, K.C. Hsieh, K.Y. Cheng,Fabrication of a Substrate-Independent Aluminum Oxide-GaAs Distributed Bragg Reflector, Applied Physics Letters, vol. 75 No. 10, pp. 1371-1373, Sep. 6, 1999.
International Search Report from corresponding PCT patent application No. PCT/US2004/031254.
K.L. Chang, G.W. Pickrell, K.Y. Cheng and K.C. Hsieh,Wafer Banding With Low-Temperature-Grown(Ga,P)as an Adhesive Material, pp. 906-910, Institute of Physics Publishing, Semiconductor Science and Technology, 2004.
K.D. Choquette. K.M. Geib, B. Roberds, H.Q. Hou, R.D. Twesten and B.E. Hammons,Short Wavelength Bottom-Emitting Vertical Cavity Lasers Fabricated Using Wafer Bonding, pp. 1404-1405, IEEE, Electronic Letters, vol. 34, No. 14, Jul. 9, 1998.
K. Mori, K. Tokutome and S. Sugou,Low-Threshold Pulsed Operation of Long-wavelength Lasers on Si Fabricated By Direct Bonding, pp. 284-285, IEEE Electronic Letters, vol. 31, No. 4, Feb. 16, 1995.
PCT Notification Concerning Transmittal of Copy of International Preliminary Report on Patentability from PCT/US2004/031254.
Chang Kuo-Lih
Cheng Keh-Yung
Epple John H.
Hsieh Kuang Chien
Pickrell Gregory
Board of Trustees of the University of Illinois
Brinks Hofer Gilson & Lione
Trinh Hoa B
Weiss Howard
LandOfFree
Adhesive bonding with low temperature grown amorphous or... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Adhesive bonding with low temperature grown amorphous or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adhesive bonding with low temperature grown amorphous or... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4009852