Adhesion bond-breaking of lift-off regions on semiconductor stru

Details Adhesion bond-breaking of lift-off regions on semiconductor stru Adhesion bond-breaking of lift-off regions on semiconductor stru

1982-08-02

1984-01-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 19, 134 2219, 134 34, 156652, 156655, 156668, 252 791, 427 88, 430314, 430317, B44C 122, C03C 1500, C03C 2506

Patent

active

044287968

ABSTRACT:
A process is described for removing polyimide regions adhered to the surface of a semiconductor structure 10 which includes the steps of heating the structure 10 and the polyimide regions 12 to between 450.degree. and 490.degree. C., immersing the structure in a solution of one of methylene chloride and ethylene diamine/hydrazine, and ultrasonerating the solution and the semiconductor structure.

REFERENCES:
patent: 3873361 (1975-03-01), Franco
patent: 4256816 (1981-03-01), Dunkleberger

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