Adhesion between dielectric layers in an integrated circuit

Details Adhesion between dielectric layers in an integrated circuit Adhesion between dielectric layers in an integrated circuit

1995-06-06

1997-05-06

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257641, 257644, 257760, H01L 21471, H01L 23485

Patent

active

056274033

ABSTRACT:
A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material, specifically silicon oxynitride or silicon nitride, on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material (silicon oxynitride or silicon nitride particularly) overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2), silicon dioxide in the preferred embodiment, is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).

REFERENCES:
patent: 4543271 (1985-09-01), Peters
patent: 4613888 (1986-09-01), Mase et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4891325 (1990-01-01), Hezel et al.
patent: 4988423 (1991-01-01), Yamamoto et al.
patent: 5061646 (1991-10-01), Sivan et al.
patent: 5110766 (1992-05-01), Maeda et al.
patent: 5258643 (1993-11-01), Cohen
patent: 5380553 (1995-01-01), Loboda
patent: 5411917 (1995-05-01), Forouhi et al.
Translation of Japan Kokai Pub. # 04-0109623 to Saito, Apr. 1992, 19 pages.
K. Fujino et al., "Doped silicon oxide deposition by atmospheric pressure and low temperature chemical vapor deposition using tetraethoxsilane and ozone", J. of Electrochem. Soc., vol. 138, No. 10., Oct. 1991, pp. 3019-3024.
Patent Abstracts of Japan, vol. 11, No. 77 (E-47) 7 Mar. 1987 & Translation of JP-A-61 232 646 (NEC Corp.) 16 Oct. 1986.

Affiliated with

Also associated with

Rating

Adhesion between dielectric layers in an integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Adhesion between dielectric layers in an integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adhesion between dielectric layers in an integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134533