Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-15
2005-03-15
Tokar, Michael (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06867134
ABSTRACT:
An electrode structure wherein galvanic corrosion at adhesion layers formed between electrodes and electronic or electro-optic substrates is eliminated. The electrode structure includes an electro-optic crystalline substrate, an amorphous layer disposed on the crystalline substrate, the amorphous layer having a composition substantially similar to a composition of the crystalline substrate, and a gold layer disposed directly on the amorphous layer. The amorphous layer is created using ion sputtering etching techniques that clean and activate the surface of the crystalline substrate such that the gold layer is able to adhere to it.
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Robert F.Pierret, Field Effect Devices, 1983, Addison-Wesley Publishing Company , Inc, vol. IV, cover and pp. 63 and 82.*
U.S. patent application Ser. No. 10/261,877, Chen, filed Oct. 1, 2002.
Bosenberg Walter
Brodsky Lawrence
Chen Xingfu
Clark John
Lynch Daniel
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