Add one process step to control the SI distribution of Alsicu to

Details Add one process step to control the SI distribution of Alsicu to Add one process step to control the SI distribution of Alsicu to

1998-06-04

1999-11-30

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438654, 438688, H01L 21441

Patent

active

059942193

ABSTRACT:
A new method of metal deposition with reduced metal residue after metal etching by cooling the wafer before metal deposition is described. A first patterned conducting layer is provided overlying a dielectric layer on the surface of a semiconductor substrate. The wafer is cooled to a temperature of less than about 20.degree. C. Thereafter, a metal layer is deposited overlying the first patterned conducting layer. The metal layer is etched away where it is not covered by a mask to complete formation of the metal line. Cooling of the wafer before metal deposition decreases the metal residue found after metal etching.

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