Adaptive read and write systems and methods for memory cells

Details Adaptive read and write systems and methods for memory cells Adaptive read and write systems and methods for memory cells

2011-05-10

2011-05-10

Tsai, Sheng-Jen (Department: 2186)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C711SE12001

Reexamination Certificate

active

07941590

ABSTRACT:
Adaptive memory read and write systems and methods are described herein that adapts to changes to threshold voltage distributions of memory cells as of result of, for example, the detrimental affects of repeated cycling operations of the memory cells. The novel systems may include at least multi-level memory cells, which may be multi-level flash memory cells, and a computation block operatively coupled to the multi-level memory cells. The computation block may be configured to compute optimal or near optimal mean and detection threshold values based, at least in part, on estimated mean and standard deviation values of level distributions of the multi-level memory cells. The optimal or near optimal mean and detection threshold values computed by the computation block may be subsequently used to facilitate writing and reading, respectively, of data to and from the multi-level memory cells.

REFERENCES:
patent: 4041456 (1977-08-01), Ott et al.
patent: 5734612 (1998-03-01), Yoshikawa
patent: 5751635 (1998-05-01), Wong et al.
patent: 5825243 (1998-10-01), Sato et al.
patent: 6115285 (2000-09-01), Montanari et al.
patent: 6538922 (2003-03-01), Khalid et al.
patent: 6674900 (2004-01-01), Ma et al.
patent: 6678192 (2004-01-01), Gongwer et al.
patent: 7116597 (2006-10-01), Goldman et al.
patent: 2002/0196510 (2002-12-01), Hietala et al.
patent: 2004/0027958 (2004-02-01), Takeuchi et al.
patent: 2007/0076464 (2007-04-01), Koebernick et al.
patent: 2007/0245214 (2007-10-01), Ramamoorthy
patent: 2008/0092026 (2008-04-01), Brandman et al.
patent: 2008/0291724 (2008-11-01), Litsyn et al.
patent: 2009/0003073 (2009-01-01), Rizel et al.
patent: WO 97/48099 (1997-12-01), None
patent: WO 02/27729 (2002-04-01), None

Affiliated with

Also associated with

Rating

Adaptive read and write systems and methods for memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Adaptive read and write systems and methods for memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adaptive read and write systems and methods for memory cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2668072