Adaptive programming technique for a re-writable conductive...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S158000, C365S189070

Reexamination Certificate

active

06940744

ABSTRACT:
A programming circuit is provided. As a conductive memory cell is programmed, its resistance changes. The provided programming circuit monitors the changing resistance while programming the memory cell. The programming circuit can be used to only program the memory cell for as long as programming is actually needed. Additionally, the programming circuit can be used to only program the memory cell when it has a value that needs to be changed.

REFERENCES:
patent: 5287326 (1994-02-01), Hirata
patent: 5422842 (1995-06-01), Cernea et al.
patent: 5495442 (1996-02-01), Cernea et al.
patent: 5532964 (1996-07-01), Cernea et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6324093 (2001-11-01), Perner et al.
patent: 6515904 (2003-02-01), Moore et al.
patent: 6574145 (2003-06-01), Kleveland et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6798685 (2004-09-01), Rinerson et al.
patent: 6807088 (2004-10-01), Tsuchida
patent: 6809976 (2004-10-01), Ooishi
patent: 6831854 (2004-12-01), Rinerson et al.
patent: 6834008 (2004-12-01), Rinerson et al.
patent: 6836421 (2004-12-01), Rinerson et al.
patent: 6850429 (2005-02-01), Rinerson et al.
patent: 6850455 (2005-02-01), Rinerson et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 6859382 (2005-02-01), Rinerson et al.
patent: 6870755 (2005-03-01), Rinerson et al.
Beck, A. et al., “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, 139-141.
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, 2892-2898.
Watanabe, Y. et al., “Current-driven insulator-conductor transistion and nonvolatile memory in chromium-doped SrTiO3single crystals ,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740.
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”,Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
Liu, S.Q., et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect In Magnetoresistive Films”,Space Vacuum Epitaxy Center, University of Huston, Huston TX, 7 Pages.

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