Adaptive algorithm for MRAM manufacturing

Details Adaptive algorithm for MRAM manufacturing Adaptive algorithm for MRAM manufacturing

2008-01-22

2008-01-22

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S154000, C365S158000, C365S185080, C365S189070

Reexamination Certificate

active

11485195

ABSTRACT:
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

REFERENCES:
patent: 6477081 (2002-11-01), Poechmueller
patent: 6639848 (2003-10-01), Maejima
patent: 6639859 (2003-10-01), Tran
patent: 6649931 (2003-11-01), Honma et al.
patent: 2003/0210596 (2003-11-01), Pecner
patent: 2004/0042262 (2004-03-01), Tran et al.
patent: 2004/0090835 (2004-05-01), Miyatake et al.

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