Adaptive algorithm for MRAM manufacturing

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S189070, C365S201000

Reexamination Certificate

active

07369430

ABSTRACT:
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

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patent: 2003/0210596 (2003-11-01), Perner
patent: 2004/0042262 (2004-03-01), Tran et al.
patent: 2004/0090835 (2004-05-01), Miyatake et al.

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