Active up-pump for semiconductor sense lines

Details Active up-pump for semiconductor sense lines Active up-pump for semiconductor sense lines

1988-09-30

1990-01-30

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307448, 365205, 365207, H03K 19017, G11C 702

Patent

active

048975680

ABSTRACT:
A pumpdown circuit uses voltage sensing to bring a low node to a potential of V.sub.SS +V.sub.T by first grounding the node and then floating the node to the V.sub.SS +V.sub.T potential. When a sensing node is at the V.sub.SS +V.sub.T potential, the sensing node is maintained at a level above ground by leakage current through a pump-up circuit. Biasing the digit and digit* lines to a potential V.sub.T above ground reduces current (amperage) requirement, because the digit and digit* lines do not have to be discharged completely to ground. The momentary discharge of the sense amp node to ground allows the sense amp to behave like a conventional sense amp during initial sensing, thereby allowing a minimum digit/digit* sensing potential to approximate ground plus V.sub.T.

REFERENCES:
patent: 3942164 (1976-03-01), Dunn
patent: 4279023 (1981-07-01), Houghton
patent: 4461965 (1984-07-01), Chin
patent: 4551641 (1985-11-01), Pelley, III
patent: 4634901 (1987-01-01), McElroy
patent: 4638459 (1987-01-01), Pechar, Jr. et al.
patent: 4694205 (1987-09-01), Shu et al.
patent: 4752699 (1988-06-01), Cranford, Jr. et al.

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