Active type solid-state image device and method for fabricating

Details Active type solid-state image device and method for fabricating Active type solid-state image device and method for fabricating

1997-03-03

1999-08-10

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257443, H01L 31113

Patent

active

059362707

ABSTRACT:
The active type solid-state imaging device of this invention having a transistor for obtaining signal charges by photoelectric conversion of incident light, accumulating the signal charges, and outputting an electric signal corresponding to the accumulated signal charges, includes an electric field strength buffering region for lowering the electric field strength between at least one of a source region and a drain region of the transistor and a photoelectric conversion region.

REFERENCES:
patent: 4929994 (1990-05-01), Matsumoto
T. Watanabe, Japanese Laid-Open Patent Publication No. 8-708653, Published on Mar. 22, 1996.
T. Watanabe, et al., Japanese Laid-Open Patent Publication No. 8-250697. Published on Sep. 27, 1996.
K. Matsumoto, et al., "The Operation Mechanism of a Charge Modulation Device (CMD) Image Sensor", IEEE Transactions On Electron Devices, vol. 38, No. 5, pp. 989-998, May 1991.
J. Hynecek, "A New Device Architecture Suitable for High-Resolution and High-Performance Image Sensors", IEEE Transactions on Electron Devices, vol. 35, No. 5, pp. 646-652, May 1988.
E.R. Fossum, "CMOS Image Sensors: Electronic Camera on a Chip", IEEE Transactions on Electron Devices, 1995, pp. 17-25.
J. Hynecek, "BCMD-An Improved Photosite Structure for High-Density Image Sensors", IEEE Transactions on Electronic Devices, vol. 38, No. 5, pp. 1011-1020, May, 1991.

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