Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-12
1999-07-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257231, 257236, 257249, 257291, H01L 31062, H01L 31113
Patent
active
059200928
ABSTRACT:
An active type photoelectric conversion device includes a pixel having a photoelectric conversion area and a gate area which are formed in a surface portion of a semiconductor substrate of a first conductivity type. The photoelectric conversion area includes a first semiconductor layer of a second conductivity type formed in the surface portion of the semiconductor substrate; a second semiconductor layer of the first conductivity type formed on the first semiconductor layer; and a FET including a drain and a source of the second conductivity type formed from the surface of the semiconductor substrate through the second semiconductor layer and a first gate electrode formed on the second semiconductor layer with an insulating layer therebetween, the FET generating signal charges by photoelectric conversion of light incident on the semiconductor substrate through the first gate electrode and the insulating layer, accumulating the signal charges in the second semiconductor layer, and generating an output signal corresponding to the signal charges. The gate area includes a second gate electrode formed on the semiconductor substrate with an insulating layer therebetween, the second gate electrode allowing the signal charges accumulated in the second semiconductor layer in the photoelectric conversion area to flow toward the semiconductor substrate in accordance with an applied voltage to the second semiconductor layer. The second semiconductor layer of the first conductivity type is depleted depending on the applied voltage.
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Conlin David G.
Ngo Ngan V.
Sharp Kabushiki Kaisha
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