Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-16
2005-08-16
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S351000
Reexamination Certificate
active
06930357
ABSTRACT:
A silicon on insulator shaped structure formed to reduce floating body effect comprises a T-shaped active structure and a body contact for back bias. Etching a T-shape through two layers of oxide will form the T-shaped active areas. A back bias is formed when a metal line is dropped through the SOI structure and reaches a contact plug. This contact plug is doped with N+ or P+ dopant and is embedded in a Si substrate. The T-active shaped structure is used to reduce the short channel effects and junction capacitance that normally hinder the effectiveness of bulk transistors. The back bias is used as a conduit for generated holes to leave the SOI transistor area thus greatly reducing the floating effects generally associated with SOI structures.
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Fourson George
Infineon - Technologies AG
Pham Thanh V.
Slater & Matsil L.L.P.
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