Active silicon-on-insulator region having a buried insulation la

Details Active silicon-on-insulator region having a buried insulation la Active silicon-on-insulator region having a buried insulation la

1997-12-09

1999-11-09

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257349, 257350, 257351, 257352, 257353, 257354, 438219, 438221, 438296, 438355, H01L 2906

Patent

active

059820063

ABSTRACT:
An active silicon-on-insulator region isolation structure is provided that includes an active bulk substrate region (24), an active silicon-on-insulator region (22), and a transition region positioned between the active bulk substrate region (24) and the active silicon-on-insulator region (22). The active silicon-on-insulator region (22) includes a silicon-on-insulator film (16) positioned above a buried insulator layer (18). The transition region includes a sloping portion of the buried insulator layer (18) and a tapered edge portion of the silicon-on-insulator film (16).

REFERENCES:
patent: 5517047 (1996-05-01), Linn et al.

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