Static information storage and retrieval – Systems using particular element – Molecular or atomic
Reexamination Certificate
2007-08-07
2007-08-07
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Molecular or atomic
C365S153000, C365S105000
Reexamination Certificate
active
10776870
ABSTRACT:
Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers. The system includes a controller that can actively trace conditions associated with such programming. In one aspect of the present invention, by providing an external stimulus, an associated electrical or optical property associated with the memory cell is affected. Such property is then compared to a predetermined value to set/verify a programming state for the memory cell. The external stimulus can then be removed upon completion of the programming, or reduced to a verifying state to read information. The memory cell can include alternating layers of active, passive, diode, and barrier layers positioned between at least two electrodes.
REFERENCES:
patent: 4652894 (1987-03-01), Potember et al.
patent: 4663270 (1987-05-01), Potember et al.
patent: 5579199 (1996-11-01), Kawamura et al.
patent: 5589692 (1996-12-01), Reed
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6069820 (2000-05-01), Inomata et al.
patent: 6208553 (2001-03-01), Gryko et al.
patent: 6212093 (2001-04-01), Lindsey
patent: 6272038 (2001-08-01), Clausen et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6320200 (2001-11-01), Reed et al.
patent: 6324091 (2001-11-01), Gryko et al.
patent: 6348700 (2002-02-01), Ellenbogen et al.
patent: 6381169 (2002-04-01), Bocian et al.
patent: 6424565 (2002-07-01), Brug et al.
patent: 6627944 (2003-09-01), Mandell et al.
patent: 6781868 (2004-08-01), Bulovic et al.
patent: 6839275 (2005-01-01), Van Brocklin et al.
patent: 6870183 (2005-03-01), Tripsas et al.
patent: 6873543 (2005-03-01), Smith et al.
patent: 6885573 (2005-04-01), Sharma et al.
patent: 6900488 (2005-05-01), Lopatin et al.
patent: 6950331 (2005-09-01), Yang et al.
patent: 99101838 (2000-12-01), None
patent: WO 03/017282 (2003-02-01), None
International Search Report, PCT/RU01/00334, Feb. 21, 2002.
Krieger Juri Heinrich
Yudanov Nikolay Fedorovich
Advanced Micro Devices , Inc.
Amin Turocy & Calvin LLP
LandOfFree
Active programming and operation of a memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Active programming and operation of a memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active programming and operation of a memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3879773