Active pixel sensor with inter-pixel function sharing

Details Active pixel sensor with inter-pixel function sharing Active pixel sensor with inter-pixel function sharing

1997-02-28

2000-12-12

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

327515, H01L 27146, H03K 342

Patent

active

061602817

ABSTRACT:
An image sensor having a plurality of pixels comprising a semiconductor material of a first conductivity type with at least two adjacent pixels, each of the pixels has a photodetector formed within the substrate and an electrical function that is shared between the adjacent pixels integrated within the adjacent pixels. The electrical function can be: a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion, a reset drain, a lateral overflow gate, an overflow drain or an amplifier, that is shared between multiple pixels resulting in a saving of space.

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Hon-Sum Wong, Technology and Device Scaling Considerations for CMOS Imagers, IEEE vol. 43, No. 12, Dec. 1996.
Eric R.Fossum, Active Pixel Sensors: Are CCD's Dinosaurs?, SPIE vol. 1900.
128/128 CMOS Photodiode-type Active Pixel R.H. Nixon, S.E. Kemeny, C.O. Staller and E. R. Fossum, Sensor With on-Chip Timing, Control and Signal Chain Electronics, SPIE vol. 2415 (1995).

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