Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-23
1998-12-29
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257239, 257290, 257291, 257461, H01L 31062, H01L 31113
Patent
active
058544984
ABSTRACT:
The accuracy of an active pixel sensor cell is increased by utilizing a reset diode in lieu of the reset transistor that is conventionally used to reset the voltage on the photodiode of the cell. The reset diode, which is largely unaffected by 1/f noise, consistently resets the photodiode to a substantially constant voltage as opposed to the reset transistor which varies the reset voltage on the photodiode across integration periods due to the effect of 1/f noise. In the present invention, the photodiode is formed by forming a well region of a second conductivity type in a substrate of a first conductivity type. The reset diode is then formed by forming a reset region of the first conductivity type in the well region.
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Mendis, S. et al., Progress in CMOS Active Pixel Image Sensors, SPIE vol. 2172, (1994) Center for Space Microelectronics Tech., Jet Propulsion Laboratory, California Insitute of Technology, p. 19-29, paper presented at a Conference on Feb. 7-8, 1994 in San Jose, CA.
Kawashima, H. et al., A 1/4 Inch Format 250K Pixel Amplified MOS Image Sensor Using CMOS Process, 1993 IEEE, pp. 575-578, Tokyo, Japan.
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Foveonics, Inc.
Ngo Ngan V.
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