Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-14
1998-08-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 59, 257222, 257232, 257233, 257290, 257291, 257292, 257446, H01L 2904, H01L 27148, H01L 31062, H01L 3100
Patent
active
057897743
ABSTRACT:
The leakage current at the silicon-to-silicon dioxide interfaces of an active pixel sensor cell is substantially reduced by eliminating field oxide from the cell, and by insuring that, during integration, every surface region of the cell that is not heavily doped is either biased into accumulation or biased into inversion. Each of these states, in turn, substantially limits the number of electrons from thermally-generated electron-hole pairs at the surface that can contribute to the leakage current.
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Foveonics, Inc.
Saadat Mahshid D.
Soward Ida Marie
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