Active pixel having reduced dark current in a CMOS image sensor

Details Active pixel having reduced dark current in a CMOS image sensor Active pixel having reduced dark current in a CMOS image sensor

2003-08-07

2008-05-06

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257SE31124

Reexamination Certificate

active

07368772

ABSTRACT:
The active pixel includes a photodiode, a transfer gate, and a reset transistor. The photodiode is substantially covered with an overlying structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. In one embodiment, the photodiode is covered by a FOX region in combination with the transfer gate.

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European Search Report for European Application EP 02 25 6256, transmitted on Mar. 10, 2006, 3 pages.

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