Active pixel having reduced dark current in a CMOS image sensor

Details Active pixel having reduced dark current in a CMOS image sensor Active pixel having reduced dark current in a CMOS image sensor

2006-09-12

2006-09-12

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S395000

Reexamination Certificate

active

07105878

ABSTRACT:
The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. The protective structure has a photodiode contact formed therein to electrically connect the photodiode to the pixel output transistor.

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