Active photosensitive structure with buried depletion layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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Details

C257S431000, C257S462000, C257SE27148, C438S057000, C438S186000

Reexamination Certificate

active

07612393

ABSTRACT:
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

REFERENCES:
patent: 3887936 (1975-06-01), Shannon et al.
patent: 5298778 (1994-03-01), Yonemoto
patent: 5528059 (1996-06-01), Isogai
patent: 6188093 (2001-02-01), Isogai et al.
patent: 7009647 (2006-03-01), Kozlowski et al.
patent: 2003/0089930 (2003-05-01), Zhao
patent: 2003/0179159 (2003-09-01), Ohsawa et al.

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