Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-01-17
2009-11-03
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S431000, C257S462000, C257SE27148, C438S057000, C438S186000
Reexamination Certificate
active
07612393
ABSTRACT:
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.
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Jerdev Dmitri
Khaliullin Nail
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Quach Tuan N.
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