Active photosensitive structure with buried depletion layer

Details Active photosensitive structure with buried depletion layer Active photosensitive structure with buried depletion layer

2004-08-30

2008-10-28

Quach, Tuan N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S258000, C257S292000, C257S465000, C257SE27148

Reexamination Certificate

active

07442970

ABSTRACT:
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

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