Active method and system of establishing electrical contact

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C323S355000, C323S305000, C118S7230AN, C257S357000, C257S355000, C257S356000, C438S212000, C438S223000

Reexamination Certificate

active

10241307

ABSTRACT:
A system for electrically contacting a semiconductor wafer during implanting of the wafer includes one or more pairs of closely spaced contacts located adjacent the semiconductor wafer and a driving circuit connected to the contacts to provide a discharge from one contact to the semiconductor wafer and from the semiconductor wafer to the other contact of each pair of contacts. The contacts can be spaced apart from the wafer and the tips of the contacts closest to the wafer may have sharp points to aid in the establishment of corona at lower drive voltages. Alternately, the contacts may be rounded and may contact the wafer. The driving circuit may be adapted from a pulsed discharge circuit, such as a Kettering ignition circuit, a capacitance discharge ignition circuit, or a blocking oscillator circuit. Alternately, the driving circuit may be adapted from a continuous discharge circuit, such as a Tesla coil circuit.

REFERENCES:
patent: 4120305 (1978-10-01), Rhoads et al.
patent: 6062870 (2000-05-01), Hopfer, III et al.
patent: 6159055 (2000-12-01), Satitpunwaycha et al.
patent: 6219219 (2001-04-01), Hausmann et al.
patent: 6241537 (2001-06-01), Tate et al.
patent: 6365941 (2002-04-01), Rhee

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