Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-11-22
2009-06-02
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S459000, C257S059000
Reexamination Certificate
active
07541224
ABSTRACT:
A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provided on the first substrate via an adhesion layer, and having projections and depressions on a surface thereof opposing to the first substrate, the projections and depressions having rounded tips and bottoms; active elements provided on the thin glass layer, each active element corresponding to a pixel; a display provided above the thin glass layer, and driven by the active elements to display an image pixel by pixel; and a second substrate provided on the display, and having an opposing electrode formed thereon.
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patent: 6831727 (2004-12-01), Akiyama et al.
patent: 2001-215481 (2001-08-01), None
T. Hioki, et al., IDW '02 Proceedings, pp. 319-322, “A Flexible 8.4-in, Color Low-Temperature Poly-Si TFT-LCD”, Dec. 4, 2002.
Akiyama Masahiko
Hara Yujiro
Hioki Tsuyoshi
Nakajima Mitsuo
Onozuka Yutaka
Kabushiki Kaisha Toshiba
Nguyen Thinh T
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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