Active matrix substrate and method of fabricating the same

Details Active matrix substrate and method of fabricating the same Active matrix substrate and method of fabricating the same

2007-01-02

2007-01-02

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S155000, C438S164000, C438S166000, C257SE21561

Reexamination Certificate

active

10778442

ABSTRACT:
An active matrix substrate includes a substrate composed of resin, and a polysilicon thin film diode formed on the substrate. The polysilicon thin film diode may be a lateral diode centrally having a region into which impurity is doped. As an alternative, the polysilicon thin film diode may be comprised of two lateral diodes electrically connected in parallel to each other and arranged in opposite directions.

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patent: 2001/0022644 (2001-09-01), Hinata
patent: 2003/0001813 (2003-01-01), Sekiguchi
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patent: 7-074374 (1995-03-01), None
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patent: 11-103064 (1999-04-01), None
patent: 11-174424 (1999-07-01), None
patent: 11-231300 (1999-08-01), None

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