Active matrix substrate and its manufacturing method

Details Active matrix substrate and its manufacturing method Active matrix substrate and its manufacturing method

2011-04-12

2011-04-12

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C349S043000, C438S149000

Reexamination Certificate

active

07923729

ABSTRACT:
An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.

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