Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-04
2007-12-04
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257SE33064
Reexamination Certificate
active
11162649
ABSTRACT:
An active matrix substrate is provided, including a substrate, a plurality of pixel units, a static releasing conductive line and an ESD protection circuit, wherein the substrate has an active area and a peripheral area adjacent to each other. The pixel units are arranged in the active area in an array, and the static releasing conductive line is disposed in the peripheral area of the substrate. The ESD protection circuit is also disposed in the peripheral area of the substrate, being electrically connected between the pixel units and the static releasing conductive line. The ESD protection circuit includes a protection ring and a static consumption device, wherein the protection ring is disposed in a peripheral area of the substrate and the static consumption device has a floating gate, the static consumption device being electrically connected between the ESD protection circuit and the static releasing conductive line.
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Huang Shu-Ming
Liu Po-Yuan
Lu Chao-Liang
Au Optronics Corporation
Cao Phat X.
Jianq Chyun IP Office
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