Active matrix panel with two thin film transistors to a pixel

Details Active matrix panel with two thin film transistors to a pixel Active matrix panel with two thin film transistors to a pixel

2007-08-07

2007-08-07

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11049147

ABSTRACT:
An active matrix panel comprises a semiconductor thin film to constitute the switching element which includes••a common source-drain region having a bend portion with a channel region on one end and the other end further followed by a second source region of the channel region sequentially formed to one end of the common source-drain region and a second drain region of the channel region sequentially formed to the other end of the common source-drain which is connected to one of the data lines; a gate insulating film arranged on a surface of the semiconductor thin film; and a gate electrode arranged in areas on the gate insulating film corresponding to the channel region upper part for the second source region and the second drain region which is connected to one of the scanning lines.

REFERENCES:
patent: 5367392 (1994-11-01), Janai
patent: 5608557 (1997-03-01), Wu
patent: 6259117 (2001-07-01), Takemura et al.
patent: 6297518 (2001-10-01), Zhang
patent: 2001/0043292 (2001-11-01), Tsujimura et al.
patent: 1138181 (1996-12-01), None
patent: 1338658 (2002-03-01), None
patent: 58-171860 (1983-10-01), None
patent: 8-236780 (1996-09-01), None

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