Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-11-13
1994-06-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 59, 257 72, 257408, 257351, H01L 2701, H01L 2904, H01L 3036, H01L 2976
Patent
active
053230426
ABSTRACT:
In the case of an LDD-structure thin film transistor, an on-current becomes large as impurity concentration of low level impurity source and drain regions is increased. Then, when the impurity concentration is increased to a first impurity concentration, the on-current reaches to a substantially maximum point. On the other hand, a cut-off current I.sub.off becomes substantially minimum when the impurity concentration is decreased to a second impurity concentration. The cut-off current is gradually increased even if the impurity concentration becomes higher or lower than the second impurity concentration. Therefore, impurity concentration of low level impurity source and drain regions of a thin film transistor for a peripheral circuit is set to a first impurity concentration, and that of low concentration impurity source and drain regions of a thin film transistor for a matrix circuit is set to a second impurity concentration.
REFERENCES:
patent: 3840695 (1974-10-01), Fischer
patent: 4663645 (1987-05-01), Komori et al.
Patent Abstracts of Japan, vol. 7, No. 258 (E-211)(1403) Nov. 17, 1983 & JP-A-58 142 566 (Suwa Seikosha K.K.) Aug. 24, 1983.
Casio Computer Co. Ltd.
Hille Rolf
Loke Steven
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