Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Patent
1995-07-31
1997-09-16
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
349 40, 257 59, 458 6, H01L 21786, G02F 11343
Patent
active
056680325
ABSTRACT:
An improved method of manufacturing active matrix displays with ESD protection through final assembly and in process testing and repair capabilities. At least a first set of shorting bars is formed adjacent the row and column matrix. The shorting bars are respectively coupled to one another in series to allow testing of the matrix elements. A first shorting bar is coupled to the odd row lines, a second shorting bar is coupled to the even row lines, a third shorting bar is coupled to the odd column lines and a fourth shorting bar is coupled to the even column lines. The shorting bars can remain coupled to the matrix through final assembly to provide ESD protection and final assembly and testing capability.
REFERENCES:
patent: 4820222 (1989-04-01), Holmberg et al.
patent: 5019001 (1991-05-01), Abe et al.
patent: 5019002 (1991-05-01), Holmberg
patent: 5068748 (1991-11-01), Ukai et al.
patent: 5123847 (1992-06-01), Holmberg et al.
patent: 5497146 (1996-03-01), Hebiguchi
Holmberg Scott H.
Vu Quy
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