Active magnetic shielding

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S298160, C204S192120, C118S504000, C156S345300

Reexamination Certificate

active

06846396

ABSTRACT:
Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

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JP 62-37372 English abstract.*
U.S. Provisional application for Patent Ser. No. 06/400,097, filed on Aug. 1, 2002, entitled “Self-Ionized and Capacitively-Coupled Plasma for Sputtering and Resputtering,” invented by P. Gopairaja, J. Fu, X. Tang, J.C. Foster and U. Kelkar.
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U.S. patent application No. 10/407,893 filed Apr. 4, 2003; (29 pp as filed; 3 pp format drawings).

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