Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-10-26
1996-06-04
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257377, 257380, 257383, 257904, H01L 2702, H01L 2711
Patent
active
055236006
ABSTRACT:
A compact MOS type active device is constructed at least partially in an opening in an insulation layer, such as an oxide layer, above a portion of a semiconductor substrate forming a first source/drain region of the MOS type active device. A semiconductor material, on the sidewall of the opening, and in electrical communication with the portion of the substrate forming the first source/drain region of the device, comprises the channel portion of the MOS device. A second source/drain region, in communication with an opposite end of the channel, is formed on the insulation layer adjacent the opening and in electrical communication with the channel material in the opening. A gate oxide layer is formed over the channel portion and at least partially in the opening, and a conductive gate electrode is then formed above the gate oxide.
REFERENCES:
patent: 4960723 (1990-10-01), Davies
patent: 5159430 (1992-10-01), Manning et al.
patent: 5250450 (1993-10-01), Lee et al.
patent: 5283201 (1994-02-01), Tsang et al.
patent: 5293053 (1994-03-01), Malhi et al.
patent: 5308778 (1994-05-01), Fitch et al.
patent: 5381046 (1995-01-01), Cederbaum et al.
Hille Rolf
LSI Logic Corporation
Taylor John P.
Tran Minhloan
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