Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-10-23
2007-10-23
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S158000, C365S189090
Reexamination Certificate
active
10695010
ABSTRACT:
A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.
REFERENCES:
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6606262 (2003-08-01), Perner
patent: 6791873 (2004-09-01), Perner
Abraham David William
Trouilloud Philip Louis
Buchenhorner Michael J.
Hoang Huan
Weinberg Michael
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