Active bias for a pulsed power amplifier

Details Active bias for a pulsed power amplifier Active bias for a pulsed power amplifier

1995-04-07

1996-01-30

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

330285, H03G 330

Patent

active

054883318

ABSTRACT:
A high-power radio-frequency amplifier acts on periodic pulses of RF energy. The bias is controlled for each of a bank of FETs or other amplifier devices that constitutes the main power stage. A sample of bias current is obtained during a blanking period on the front porch of the RF gating period. Quiescent drain current is measured, and stored on a sample/hold circuit. A digital signal processor provides bias values that are sent via a D/A converter to biasing circuits that add the bias levels to the input RF signal. If the bias current is above or below a desired level, the stored bias level is decreased or incremented respectively. A timing control circuit gates the sample/hold circuit and switches in advance of the biasing circuits. The timing control circuit also creates a blanking signal to apply to an attenuator to produce a null region during the first 100 microseconds of the gating signal. A thermal sensor is coupled to one or more amplifying devices for presetting the operating voltage when operation has been interrupted for a predetermined period of time.

REFERENCES:
patent: 4794343 (1988-12-01), Yang
patent: 5101173 (1992-03-01), DiPiazza et al.

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