Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-31
2005-05-31
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C438S680000, C438S686000, C438S754000
Reexamination Certificate
active
06900128
ABSTRACT:
The present invention provides approaches for electroless deposition of conductive materials onto the surface of oxide-based materials, including nonconductive metal oxides, in a manner that does not require intervening conductive pastes, nucleation layers, or additional seed or activation layers formed over the surface of the oxide-based layer. According to one embodiment of the present invention, a layer of a titanium-based material is formed over an oxide-based surface. The layer of titanium-based material is subsequently removed from the surface of the oxide-based layer in a manner such that the surface of the oxide-based layer is activated for electroless deposition. A metal or metal alloy is then plated over the oxide-based surface using electroless plating techniques.
REFERENCES:
patent: 5169680 (1992-12-01), Ting et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 6054172 (2000-04-01), Robinson et al.
patent: 6054173 (2000-04-01), Robinson et al.
patent: 6126989 (2000-10-01), Robinson et al.
patent: 6165912 (2000-12-01), McConnell et al.
patent: 6180523 (2001-01-01), Lee et al.
patent: 6326303 (2001-12-01), Robinson et al.
patent: 6396148 (2002-05-01), Eichelberger et al.
patent: 6436816 (2002-08-01), Lee et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6686237 (2004-02-01), Wofford et al.
patent: 6723679 (2004-04-01), Izaki et al.
Tetsuya Osaka, Nao Takano, Tetsuya Kurokawa, Tomomi Kaneko, and Kazuyoshi Ueno; Electroless Nickel Ternary Alloy Deposition on SiO2 for Application to Diffusion Barrier Layer in Copper Interconnect Technology; Journal of The Electrochemical Society; 2002; C573-C578; The Electrochemical Society, Inc.; Japan.
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