Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C438S680000, C438S686000, C438S754000
Reexamination Certificate
active
06872659
ABSTRACT:
The present invention provides approaches for electroless deposition of conductive materials onto the surface of oxide-based materials, including nonconductive metal oxides, in a manner that does not require intervening conductive pastes, nucleation layers, or additional seed or activation layers formed over the surface of the oxide-based layer. According to one embodiment of the present invention, a layer of a titanium-based material is formed over an oxide-based surface. The layer of titanium-based material is subsequently removed from the surface of the oxide-based layer in a manner such that the surface of the oxide-based layer is activated for electroless deposition. A metal or metal alloy is then plated over the oxide-based surface using electroless plating techniques.
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Tetsuya Osaka, Nao Takano, Tetsuya Kurokawa, Tomomi Kaneko, and Kazuyoshi Ueno; Electroless Nickel Ternary Alloy Deposition on SiO2 for Application to Diffusion Barrier Layer in Copper Interconnect Technology: Journal of The Electrochemical Society; 2002; C573-C578; The Electrochemical Society; Japan.
Dinsmore & Shohl LLP
Micro)n Technology, Inc.
Sarkar Asok Kumar
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