ACCUFET with Schottky source contact

Details ACCUFET with Schottky source contact ACCUFET with Schottky source contact

2005-07-20

2009-02-03

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S284000, C257S330000, C257S331000, C257S332000, C257SE29121, C257SE29271

Reexamination Certificate

active

07485932

ABSTRACT:
An accumulation mode FET (ACCUFET) which includes an insulated gate, an adjacently disposed insulated source field electrode, and a source contact that makes Schottky contact with the base region of the ACCUFET.

REFERENCES:
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patent: 6710403 (2004-03-01), Sapp
patent: 2006/0033154 (2006-02-01), Cao et al.
patent: 2006/0049454 (2006-03-01), Thapar
patent: 2007/0210356 (2007-09-01), Henson
U.S. Appl. No. 11/110,468, filed Apr. 20, 2005, ACCUFET With Source Shield Electrode.
U.S. Appl. No. 11/110,467, filed Apr. 20, 2005, MOSgated Power Semiconductor Device With Source Field Electrode.

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