ACCUFET with schottky source contact

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S341000

Reexamination Certificate

active

11110468

ABSTRACT:
An accumulation mode FET (ACCUFET) having a source contact that makes Schottky contact with the base region thereof.

REFERENCES:
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patent: WO 2006/050192 (2006-05-01), None
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Oxide-Bypassed VDMOS (OBVDMOS): An Alternative to Superjunction High Voltage MOS Power Devices, 2001, IEEE.

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