Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-06-02
2000-10-10
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, 250281, 250282, 250283, H01J 37317
Patent
active
061304360
ABSTRACT:
An ion beam generator includes an ion beam source for generating an ion beam, an acceleration/deceleration column for selectably accelerating or decelerating ions in the ion beam to desired energies, a source filter positioned between the ion beam source and the acceleration/deceleration column for removing first undesired species from the ion beam, and a mass analyzer positioned downstream of the acceleration/deceleration column for removing second undesired species from the ion beam. The ion beam generator supplies an energetic ion beam having a low level of energy and mass contaminants. The ion beam generator may be utilized in an ion implanter.
REFERENCES:
patent: 4276477 (1981-06-01), Enge
patent: 4283631 (1981-08-01), Turner
patent: 4899059 (1990-02-01), Frevtsis et al.
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5126575 (1992-06-01), White
patent: 5350926 (1994-09-01), White et al.
patent: 5672882 (1997-09-01), Day et al.
patent: 5751002 (1998-05-01), Ogata et al.
patent: 5932883 (1999-08-01), Hashimoto et al.
patent: 5945682 (1999-08-01), Oh et al.
P. H. Rose, "Advanced Ion Beam Equip. Used for Semiconductor Production", Nuc. Inst. & Methods in Phy. Research B37/38 (1989), Feb. (11), No. 2, Amsterdam, NL, pp. 22-27.
McKenna Charles
Renau Anthony
Anderson Bruce C.
Varian Semiconductor Equipment Associates Inc.
Wells Nikita
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