AC sensing for a resistive memory

Details AC sensing for a resistive memory AC sensing for a resistive memory

2007-08-28

2007-08-28

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S148000, C365S189070

Reexamination Certificate

active

11481957

ABSTRACT:
Alternating current is used to sense a logic state of a memory cell that has a resistive memory element. The memory element can be in an array and a memory device can include the array and peripheral circuitry for reading or sensing each memory cell in the array. The peripheral circuitry can include a clock/control circuit providing a control signal, which controls when a row of memory cells are sensed, a switching circuit for receiving a cellplate count signal and a bit count signal provided by the clock/control circuit, a cellplate line signal and a bit line signal from the memory cell, the switching circuit producing a first output signal and a second output signal, wherein one of the first output signal and the second output signal is at a supply voltage and the other of the first output signal and the second output signal alternates polarity with each sensing operation and a comparison circuit receiving the first output signal and the second output signal and outputting a signal corresponding to the logic sate of the memory cell.

REFERENCES:
patent: 5724297 (1998-03-01), Noda et al.
patent: 5881007 (1999-03-01), Jeong et al.
patent: 6226222 (2001-05-01), Park
patent: 6278631 (2001-08-01), Naji
patent: 6462998 (2002-10-01), Proebsting
patent: 7123530 (2006-10-01), Voshell
patent: 2002/0008987 (2002-01-01), Hideaki et al.

Affiliated with

Also associated with

Rating

AC sensing for a resistive memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with AC sensing for a resistive memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and AC sensing for a resistive memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3856492