Absorber layer for EUV

Details Absorber layer for EUV Absorber layer for EUV

2005-06-21

2005-06-21

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06908714

ABSTRACT:
The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.

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Takahashi, M. et al. “Smooth Low-Stress Sputtered Tantalum and Tantalum Alloy Films for the Absorber Material of Reflective-Type EUVL”, Emerging Lithographic Technologies IV, Santa Clara, CA Feb./Mar. 2000, vol. 3997, pp. 484-495, XP008008100, Proceedings of the SPIE, The International Society for Optical Engineering.
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Mangat, P.J.S. et al., “Extreme Ultraviolet Lithography Mask Patterning and Printability Studies with a Ta-Based Absorber”, 43rdInternational Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Marco Island, FL, Jun. 1999, vol. 17, No. 6, pp. 3029-3033, XP002213866.
PCT International Search Report PCT/US 02/04914.

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