Absorber layer for EUV

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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06908714

ABSTRACT:
The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.

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Takahashi, M. et al. “Smooth Low-Stress Sputtered Tantalum and Tantalum Alloy Films for the Absorber Material of Reflective-Type EUVL”, Emerging Lithographic Technologies IV, Santa Clara, CA Feb./Mar. 2000, vol. 3997, pp. 484-495, XP008008100, Proceedings of the SPIE, The International Society for Optical Engineering.
Mangat, P.J.S., et al. “Surface Modification and Cleaning Enhancement of TaSi(N) Films with Dilute Hydrofluoric Acid”, 46thNational Symposium of the American Vacuum Society, Vacuum, Surfaces and Films, Seattle, WA, Oct. 1999, vol. 18, No. 4, pp. 1211-1215, XP008008099, Journal of Vacuum Science & Technology.
Li, D.C. et al., “Tungsten Absorber on Silicon Membrane X-ray Masks”, 7thInternational Conference on Solid Films and Surfaces, Hsinchu, Taiwan, Dec. 1994, vol. 92, pp. 665-672, XP002213865, Applied Surface Science.
Mangat, P.J.S. et al., “Extreme Ultraviolet Lithography Mask Patterning and Printability Studies with a Ta-Based Absorber”, 43rdInternational Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Marco Island, FL, Jun. 1999, vol. 17, No. 6, pp. 3029-3033, XP002213866.
PCT International Search Report PCT/US 02/04914.

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