Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-18
2007-09-18
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S404000, C257S407000
Reexamination Certificate
active
11071196
ABSTRACT:
A Fermi threshold voltage FET has Germanium implanted to form a shallow abrupt transition between the semiconductor substrate dopant type, or well dopant type, and a counter doping layer of opposite type closely adjacent the surface of the semiconductor substrate. Germanium is a charge neutral impurity in silicon that significantly reduces the diffusion motion of other impurity dopants, such as As, P, In, and B in the regions of silicon where Ge resides in significant quantities (i.e. greater than 1E19 cm sup3).
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BAE Systems Information and Electronic Systems Integration Inc.
Snider & Associates
Tran Thien F
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