Abrading – Abrading process – Utilizing fluent abradant
Reexamination Certificate
2000-06-15
2008-08-12
Eley, Timothy V (Department: 3724)
Abrading
Abrading process
Utilizing fluent abradant
C438S693000, C451S041000, C451S059000, C451S063000
Reexamination Certificate
active
07410409
ABSTRACT:
The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
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Supplementary European Search Report, for Application No. EP 00 93 7240, dated Oct. 24, 2002.
Ashizawa Toranosuke
Haga Kouji
Hirai Keizou
Koyama Naoyuki
Machii Youiti
Antonelli, Terry Stout & Kraus, LLP.
Eley Timothy V
Hitachi Chemical Co. Ltd.
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