Ablative bond pad formation

Details Ablative bond pad formation Ablative bond pad formation

1998-01-27

2000-05-02

Picardat, Kevin M.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

438118, 438612, H01L 2144, H01L 2148, H01L 2182

Patent

active

06057173&

ABSTRACT:
A method of fabricating bond pads on a semiconductor device which includes providing a semiconductor device having a surface. A coating of solderable electrically conductive metal is deposited on the surface, preferably by sputtering, and portions of the coating are selectively removed by ablation or vaporization, preferably by use of a laser beam. The selective removal is accomplished by selective movement of the laser relative to the coating or by use of a mask followed by traversal of the laser beam over the entire coating. The coating is preferably a 500 angstrom layer of chromium over which is a 1500 angstrom layer of palladium followed by a 3500 angstrom layer of gold.

REFERENCES:
patent: 5306670 (1994-04-01), Mowatt et al.
patent: 5644143 (1997-07-01), Rostoker et al.
patent: 5805421 (1998-09-01), Livengood et al.

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