A1-N1-Y alloy films for electrodes of semiconductor devices and

Details A1-N1-Y alloy films for electrodes of semiconductor devices and A1-N1-Y alloy films for electrodes of semiconductor devices and

1998-04-13

2000-08-01

Wyszomierski, George

Stock material or miscellaneous articles

Composite

Of metal

148415, 20429813, 420550, C25D 1104

Patent

active

060964383

ABSTRACT:
The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 .mu..OMEGA.cm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 C.sub.Ni +0.74 C.sub.Y <1.6 at % where C.sub.Ni denotes the Ni content (at %) and C.sub.Y denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.

REFERENCES:
patent: 4216031 (1980-08-01), Chia et al.
patent: 4936957 (1990-06-01), Dickey et al.
patent: 5053085 (1991-10-01), Masumoto et al.
patent: 5809393 (1998-09-01), Dunlop et al.

Affiliated with

Also associated with

Rating

A1-N1-Y alloy films for electrodes of semiconductor devices and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A1-N1-Y alloy films for electrodes of semiconductor devices and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A1-N1-Y alloy films for electrodes of semiconductor devices and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661879