A P channel MIS type semiconductor device

Details A P channel MIS type semiconductor device A P channel MIS type semiconductor device

1991-11-12

1992-11-17

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257408, 257900, H01L 1114

Patent

active

051648016

ABSTRACT:
A P channel MIS type semiconductor device have P type source and drain regions formed in a N type semiconductor substrate. Each source and drain regions are constructed the low and high impurity concentration layers. Channel side edges of the low concentration impurity layers arranged inside of the high concentration impurity layers. These double layer source and drain structure prevent the off set gate construction and the parasitic resistance.

REFERENCES:
patent: 4928163 (1990-05-01), Yoshida et al.

Affiliated with

Also associated with

Rating

A P channel MIS type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A P channel MIS type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A P channel MIS type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1175764