A method of manufacturing semiconductor elements-isolating silic

Details A method of manufacturing semiconductor elements-isolating silic A method of manufacturing semiconductor elements-isolating silic

1987-02-17

1988-05-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437233, 437238, 156653, H01L 21425, H01L 21473

Patent

active

047466251

ABSTRACT:
A semiconductor manufacturing method which comprises the steps of forming a polycrystalline silicon layer on a semiconductor substrate; depositing a silicon oxide layer on the polycrystalline silicon layer; mounting an acidproof layer on the silicon oxide layer; selectively eliminating the acidproof layer deposited on a semiconductor element-isolating region by the photoetching process; selectively eliminating the silicon oxide layer with the retained acidproof layer used as a mask; ion implanting a channel stopper impurity in the semiconductor substrate through the masks formed of a photoresist coated on the acidproof layer the acidproof layer, and silicon oxide layer; eliminating the photoresist; selectively depositing a silicon layer on the exposed polycrystalline silicon; carrying out thermal oxidation with the acidproof layer used as a mask; eliminating the acidproof layer; filling an oxide in the cavities of the side walls of the semiconductor element-isolating insulation layer; and exposing by etching that portion of the semiconductor substrate which will constitute a semiconductor element region, thereby forming a thick semiconductor element-isolating layer with high precision in a narrow semiconductor element-isolating region.

REFERENCES:
patent: 4214946 (1980-07-01), Forget et al.
patent: 4570325 (1986-02-01), Higuchi

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