A method of manufacturing integrated circuits comprising EPROM m

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 27, 437 44, 437195, 437 49, 437 52, H01L 21265

Patent

active

050136747

ABSTRACT:
In a process for manufacturing MOS-type integrated circuits which comprise memory floating gate transistors and logic transistors, sandwiches comprising a polysilicon level, an isolation layer, an additional polysilicon level and an additional isolation layer are formed at the position of the memory area. At the position of the logic transistors, the additional polysilicon level is present. An additional isolation layer is deposited on the whole circuit. The substrate is anisotropically etched and there remains in the additional isolation layer, in the memory area, lateral regions which form with the isolation layer an isolating encapsulation around each sandwich and, in the logic transistors area, spacers.

REFERENCES:
patent: 4471373 (1984-10-01), Shimizu et al.
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4663645 (1987-05-01), Komori et al.
patent: 4764479 (1988-08-01), Kosa et al.
patent: 4775642 (1988-10-01), Chang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

A method of manufacturing integrated circuits comprising EPROM m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A method of manufacturing integrated circuits comprising EPROM m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A method of manufacturing integrated circuits comprising EPROM m will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-939294

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.