Semiconductor device in which wiring layer is formed below bondi

Details Semiconductor device in which wiring layer is formed below bondi Semiconductor device in which wiring layer is formed below bondi

1988-05-10

1991-01-08

James, Andrew J.

357 71, H01L 2348, H01L 2188, H01L 2314

Patent

active

049840614

ABSTRACT:
In a semiconductor device wherein a bonding pad is formed on an electrode through an insulating interlayer and a bonding wire is bonded to the bonding pad by thermocompression bonding, a through hole for connecting the bonding pad and the electrode is formed in the insulating interlayer above a contact hole for connecting the electrode and an active region formed in a semiconductor substrate. Metal columns of members of the electrode filled in the contact hole and members of the bonding pad filled in the through hole are formed under the bonding pad.

REFERENCES:
patent: 4525383 (1985-06-01), Saito
patent: 4543592 (1985-09-01), Itsumi et al.
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4617193 (1986-06-01), Wu
patent: 4636832 (1987-01-01), Abe et al.
patent: 4656496 (1987-04-01), Widlar
patent: 4795722 (1989-01-01), Welch et al.
K. Mukai et al., "A New Integration Technology that Enables Forming Bonding Pads on Active Areas", IEDM International Electron Devices Meeting, Dec. 7-9, 1981, pp. 62-65.

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